Reactive Ion Etching (IZM-22) - PR915350-2590-P

Batch 1: Reactive Ion Etching (RIE) (IZM-22.1) Reactive Ion Etching (RIE) finds its application in pretreatment of different kind of surfaces for electroplating, bonding and also to allow a better adhesion of organic films such as polymers and resist, for creating microstructures, etching patterns on wafers and manufacting integreted circuits. It is utilized for precise material removel in a controlled manner. To keep repeatable etching results with high troughput, it is necessary to have seperated processing chambers or better completely seperated tools one for organic and an other for inorganic layer etch processes (or additional metal) in order to avoid any cross-contamination, furthermore filmframe handling should be done in a seperated machine. The uniformity of reactive ion etching with typically gases Ar, SF6, CF4, O2, N2 should be better than ≤5% over a 200mm wafer to enable low process variation and high thickness uniformity which is cruicial for high yield approaches. The system should be able to handle wafers with a diameter of 100 to 200mm without or with minimal efford retrofit and with thicknesses in the range of 300-1200µm. Optional features: - The necessary pumps (preferably from Edwards) and fluid/fluid chiller included in the quote and budget

Batch 2: Reactive Ion Etching (RIE) (IZM-22.2) Reactive Ion Etching (RIE) finds its application in pretreatment of different kind of surfaces for electroplating, bonding and also to allow a better adhesion of organic films such as polymers and resist, for creating microstructures, etching patterns on wafers and manufacting integreted circuits. It is utilized for precise material removel in a controlled manner. To keep repeatable etching results with high troughput, it is necessary to have seperated processing chambers or better completely seperated tools one for organic and an other for inorganic layer etch processes (or additional metal) in order to avoid any cross-contamination, furthermore filmframe handling should be done in a seperated machine. The uniformity of reactive ion etching with typically gases Ar, SF6, CF4, O2, N2 should be better than ≤5% over a 200mm wafer to enable low process variation and high thickness uniformity which is cruicial for high yield approaches. The system should be able to handle wafers with a diameter of 100 to 200mm without or with minimal efford retrofit and with thicknesses in the range of 300-1200µm. Optional features: - The necessary pumps (preferably from Edwards) and fluid/fluid chiller included in the quote and budget