PVD-Sputter-Cluster for dielectric materials - PR887139-2380-P

Introduction Quasi-monolithic integrated (QMI) chiplets combining manifold functions like microprocessors, signal processing high speed interfaces and integrated sensor demand for high quality optical layers. For a quasi-monolithic backend integration of optical chiplets such as photodetectors, lasers, filters, phase shifters or couplers, a large variety of dielectric films (such as SiO2, TiO2, Si3N4 or AlN) is needed to match all requirements of the final chiplet technology. To achieve good overall performance of the chiplet, a very high purity of the film material as well as a good uniformity of the deposited film is required.

The deposition of these films shall be done by physical vapor deposition (PVD) sputtering in a cluster system for 200 mm wafers. The configuration of the system allows at least the deposition of the oxides and nitrides from Aluminium, Silicon and Titanium in dedicated chamber modules which is essential for the QMI processing line. The thicknesses of the deposited films range from a few nm to 1 µm. The desired uniformity of thickness and optical properties of the deposited dielectric films should, as far as possible, not exceed 3%. For advanced applications the system requires a R&D chamber for the deposition of transparent conductors or piezoelectrica. These materials are needed to extend the functionality of the future chiplet backend integration.

Avoiding cross-contamination and impurities is crucial for the quality of the optical properties of the deposited films and therefore for the overall performance of the chiplet. The existing equipment at Fraunhofer IMS today cannot cover this variety of materials. This investment is a strategic extension to the existing tools to enable quasi-monolithic integrated backend-optic providing optical layers on top of CMOS integrated chiplets which finally will be co-integrated with other chiplets using 2.5 and 3D integration.

Options - Degas Chamber Wafer clamping - Degas Chamber Process temperature °C - Wafer surface clean with Ar Sputter etch Throughput wafer/h @ 30nm removal - Wafer surface clean with Ar Sputter etch Wafer clamping - Wafer surface clean with Ar Sputter etch Process temperature °C @ etchtime 60sec - Ti(Titanium) Throughput wafer/h @ thickness 100 nm - Ti(Titanium) Deposition rate nm/min - Ti(Titanium) Wafer clamping - Ti(Titanium) Process temperature °C - TiN(Titanium Nitride) Throughput wafer/h @ thickness 100 nm - TiN(Titanium Nitride) Wafer clamping - TiN(Titanium Nitride) Process temperature °C - Si3N4 (Silicon Nitrid) Throughput wafer/h @ thickness 500 nm - Si3N4 (Silicon Nitrid) Wafer clamping - Si3N4 (Silicon Nitrid) Process temperature °C - Si (Silicon) is optionally possible on a chamber - Al (Aluminum) is optionally possible on a chamber - AlNx (Aluminum Nitride) Throughput wafer/h @ thickness 500 nm - AlNx (Aluminum Nitride) Wafer clamping - AlNx (Aluminum Nitride) Process temperature °C - AlOx (Aluminum Oxid) Throughput wafer/h @ thickness 500 nm - AlOx (Aluminum Oxid) Wafer clamping - AlOx (Aluminum Oxid) Process temperature °C - AlxScyNz (Aluminum Scandium Nitride) dedicated composition is optionally possible on a chamber - TiW (Titanium Tungsten) is optionally possible on a chamber - AlxScyNz (Aluminum Scandium Nitride) in variable compositionThroughput wafer/h @ thickness 500 nm - AlxScyNz (Aluminum Scandium Nitride) in variable composition Wafer clamping - AlxScyNz (Aluminum Scandium Nitride) in variable composition Process temperature °C - AlxScyNz (Aluminum Scandium Nitride) in variable composition Number of sputter sources - AlxScyNz (Aluminum Scandium Nitride) in variable composition Co-sputtering in variable ratios from - ITO (Indium Tin Oxide) is optionally possible on a chamber - ITO (Indium Tin Oxide) Low damage process with nearly no ion bombartment promised by sputter source designe - AZO (Alumina-doped Zinc Oxide) is optionally possible on a chamber - Sputtering of various metals (Au, Ag, Pt) in the multi target chamber process capability promised - General requirements Footprint - Configuration System External interface - Software Configuration The control software must be provided to the IMS as a separate backup file. - Software Configuration All process data can be exported in a human readable format (for example in csv). - System documentation additional documentations on digital media (PDF’s...) would be desirable - Other specifications and requirements Free of charge software support in case of faults at least 24 months post warranty.