Polymer-metal CMP (IZM-30 - PR915311-2590-P

1 piece: Polymer-metal CMP System With the advancement of 2.5D/3D packaging and especially with heterogeneous integration of different materials, there are several W2W or D2W bonding technologies or high density RDL planarization (l/s 1µm), which might involve various materials like Si, SiO, SiN, polymers, metals, and the surface roughness or topography is of essential importance. These surfaces have to be prepared by chemical mechanical planarization (CMP) to generate a surface with a roughness below 0.5nm to enable bonding of different materials properly or, on the other hand, for RDLs with L/S in the area of 1µm, each layer has to be planarized to minimize surface topography and to enable RDL layer stacking to 4-6 layers. The wafer tool should be capable to handle wafers, metal and dielectric planarization and the needed different slurries should be taken out in seperated chambers, subsequent wafer rinsing/cleaning and drying should be included in the tool as well. The planarization head should address flexible needs regarding the wafer TTV/warpage and target materials (metal and anorganic/organic dielectric), e.g. varying pressure zones on the CMP head. The wafer base material is not limited to Si, it could be glass or other semiconducting materials. For fusion bonding interfaces like SiO-SiO or polymer-polymer bonding, a sufficient roughness across the wafer below or equal to Ra=0.5nm (in the case of SiO interface) should be realizable with the tool. For the case of RDL planarization the tool has to planarize polymer and metal at the same time suffienciently to enable damascene processing. Therefore, no exessive dishing of metal and no smearing of the metal across the dielectric is allowed.

Optional features: - Machine should provide a SECS/GEM interface - Possibility to load cassettes with less than 25 slots and increased space between the individual slots (robot teaching and possible machine/software reboot allowed).