Ion Mill chamber with central handling system and 2 PVD chambers (ENAS-01.1) - PR880932-3340-P

1x wafer processing system with a central handling system, 1 chamber for ion beam etching and 1 PVD chamber for in-situ passivation and electrode deposition is being procured. The system is to process 200 mm wafers. The ion beam etching chamber must be suitable for structuring magnetic multilayer stacks (GMR, TMR). Furthermore, this chamber must be equipped with an optical emission spectrometer (OES) for endpoint detection. The PVD chamber is used for the deposition of SiN passivation layers on the GMR/TME structures directly after patterning without vacuum interruption and for the deposition of electrode systems made of noble metals.

Optional features: - Replacement set of internal chamber parts (shields / shutters) that need to be cleaned due to coating / particle generation: List the required parts per process chamber; specify the sets per chamber as individual items in the quotation - Additional substrate materials: if possible also quartz