Glas and Metal Etch (EMFT-01.2 - EMFT-01.6) - PR1074784-2270-P

1 Piece Glas and Metal Etch (EMFT-01.2 - EMFT-01.6)

Etching equipment for 200 mm substrates. Etching of glass or quartz for interposers or patterned surfacees needs sophisticated process chambers with high plasma densities and etch rate homogeneity. Usually hard masking layers, made from metal or polysilicon, are needed to transfer these pattern into glas or quartz substrates. For this reason an etching chamber for thick masking layers also needs high density plasma to achieve reasonable etch rates. On the other hand, to realize low-resistance metal lines, consuming not too much area, higher metal lines are needed. This also can be etched with this chamber type. For the advanced heterointegration patterning layer thicknesses range from a few µm up to 25µm and the dielectric layers or glas substrates from 2 µm up to 150µm. The equipment supplier should show processing excamples especially for deep via etching in glas substrates. Not every metal has a good adhesion on quartz or glas surfaces. Therefore appropriate conductive layers as well as non-conductive like nitrides are used. Beside adhesion improvement these layers are also used as stopping layers and need to be removed occationally in a separate processing step and dedicated etching chamber. The uniformity requirements for the planned application, both in deposition and patterning, should not exceed 1%. Tool needs to recognize and handle transparent substrates without additional application of opaque layers prior to handling within the tool. This equipment needs to be accuired, because there is no comparable system in the microelectronics consortium that meets the technical and process specific requirements, such as for contamination or cycle time.

Options: 1.6 EMFT-01.2 Etch of Ni, Nb, NbN, Si3N4 substrate heating as additional option next to cooled substrate 1.7 EMFT-01.2 Etch of Ni, Nb, NbN, Si3N4 Edge cover-ring 2.4 EMFT-01.3 Quartz Etch Edge cover-ring substrate edge protection with covering-ring desired 3.3 EMFT-01.4 Nitride Etch (TiN, AlN) "At least one recipe for etching of < 1 µm thick layers for each of the compound materials " "description of etch gases and type of masking material most comprehensive description yields highest score" 4.5 EMFT-01.5 Etch of Silicon/Silicon Compound Etch (c-Si, poly-Si, SiC) "At least one recipe for etching of each of the silicon/silicon compound materials " "description of etch gases and type of masking material most comprehensive description yields highest score" 5.2 EMFT-01.6 Pumps and Waferhandling Loadlock for cassette loading of 25 wafers 5.3 EMFT-01.6 Pumps and Waferhandling screen and panel on both sides (grayroom cleanroom) 5.6 EMFT-01.6 Pumps and Waferhandling "Pumps for transfer chamber " turbo pumps and backing pumps for turbopumps 5.7 EMFT-01.6 Pumps and Waferhandling "Pumps for loadlock chamber " turbo pumps and backing pumps for turbopumps 8.1 Warranty / Service conditions Offer of service contract Offer of service contract, applicable after the period of guarantee. It should include the description of the service, amount of working hours and needed spare parts 8.2 Warranty / Service conditions List of spare part kit of expendable parts List of spare part kit of expendable parts