DRIE_CVD Plasmacluster - PR340021-2590-W

1 pc of DRIE_CVD Plasmacluster with options:

15. Additional hardware for size conversion 18. DRIE and PECVD process modules might handle 200mm wafer 25. The software should have 2 different security levels (password protected) for operation, engineering 27. automated backup for the operating system, tool settings, recipes and data 28. The tools should be supplied with SECS/GEM Interface 29. Remote control option for fast service support 42. The DRIE Module has to be equipped with an Optical Emission Spectroscopy system 43. End Point detection for the switching gas process on SiO2 etch stop layer should be able to work with masks (photoresist), where the opening area can be big (~5%) but also as small as 0,5% of the total wafer area 44. An end point detection in the DRIE module shall be implemented to detect the reveal of Cu filled TSVs, when thinning from the backside is carried out. 45. The DRIE module should be able to detect the wafer thickness during thr process and stop as a defined thickness is reached 46.The RIE module should be equipped with and optical end point detecton system 47. The PECVD Module should be equipped with end point detection system for the chamber clean 95. a warranty of 24 month