Cluster ALE/ICP/RIE + PECVD + ALD (HHI-07) - PR865241-3220-P

1 Piece. The required cluster tool should include a loadlock and a handler, three separate process chambers for ALE/ICP/RIE (Atomic Layer Etching/Inductively Coupled Plasma/Reactive Ion Etching), ALD (Atomic Layer Deposition), and ICP-PECVD (Inductively Coupled Plasma-Plasma Enhanced Chemical Vapor Deposition). After etching the InP, In(Al)GaAsP, and In(Al)GaAs layers on 3" to 6" wafers in the ALE/ICP/RIE chamber, these should be transferred under high vacuum to one of the coating chambers. The ALD chamber should allow for coating with SiNx, SiO2, Al2O3, and TiO2, while the ICP-PECVD chamber should support SiNx and SiO2.

Options:

ALD chamber Gases Ozone (O3) supply via a separate generator system. ALD chamber Elllipsometer Ellipsometer for in-situ measurement of ALD layers. ALD chamber Pump system Vacuum cold trap as pump protection. ICP PECVD chamber End point detection for plasma cleaning Optical emission spectrometer (200 - 850 nm). ICP PECVD chamber Substrate holder Quartz clamping ring for clamping the 200 mm wafer/carrier on the substrate electrode. ALE chamber Optical emission Optical emission spectrometer (200 - 850 nm). ALE chamber Substrate electrode The electrode must also be suitable for operation at temperatures as low as -150°C. ALE chamber Laser interferometer A laser interferometer/reflectometer for in-situ measurement of etch depths/rates. ALE chamber Substrate holder Quartz clamping ring for clamping the 200 mm wafer/carrier on the substrate electrode.