ALD System (Dielectric + Metal) (IPMS-CNT06.1) - PR867745-2480-P

1 ALD System bestehend aus 2 Kammern inkl. Mainframe/ 2 chambers incl. Mainframe

The following specification describes the requirements of a piece of equipment to deposit metal nitrides and dielectric layers via thermal ALD processing on wafers with a diameter of 300 mm. It is required that the device continuously performs the intended functions in accordance with all the requirements specified in this EPS without malfunction or failure. In addition, the device must be supplied with all the components and parts described below that are necessary for the device to fulfill the intended functionalities and capabilities in accordance with all the requirements specified in this EPS.

Optionale Leistungspositionen: 2.2.1.1.9 Basic configuration Waferrotation in process chamber for better uniformity values available Yes/No (Yes is rated better) 2.2.1.1.10 Basic configuration internal storage of Dummywafers/Testwafers min. 10 wafers, more are rated higer 2.2.1.1.11 Basic configuration If no storage available please guarantee that different wafertypes (Dummy, Test, Product) can be processed in one run from different FOUPs/Loadports (parallel mode) Yes/No 2.2.1.1.12 Basic configuration The system is equipped with a notch aligner. This has a programmable notch angle with an accuracy of ≤0.5º for the notch and ≤0.1mm for the centering Yes/No 2.2.1.1.13 Basic configuration Cooling Station or comparable option for wafercooling (e.g. in Loadlock) , that the FOUP sees no heated wafer Yes/No 2.2.1.1.15 Basic configuration Pre-Heat Station/ Pre-Heat-Chamber available Yes/No 2.2.1.2.5 Cassette and wafer specification -wafer material Handling of Quartz wafers Yes or No 2.2.2.12 Chamber A (Oxide chamber) Option for further process gases (e.g. NH3) min. NH3, more gas connections are rated better 2.2.2.14 Chamber A (Oxide chamber) Parallel processing option for wafers if available please specify, min. 2 wafer 2.2.3.12 Chamber B (Metalnitrid chamber) Option for further process gases (e.g. O3 or H2O) more gas connections are rated higher 2.2.3.15 Chamber B (Metalnitrid chamber) Insitu clean option if available please specify 2.2.3.16 Chamber B (Metalnitrid chamber) Parallel processing option for wafers if available please specify, min. 2 wafers 2.2.4.2 Pre-Heat chamber (optional) Substrate Heater Temperature 400°C or higher 2.2.4.4 Pre-Heat chamber (optional) Wafer storage of full waferload per chamber available Yes/No 2.2.4.5 Pre-Heat chamber (optional) process gas available (e.g. N2, O2) the more the better 2.2.6.1 Subtools Pumps are included in the offer Yes/No, Edwards-Type 2.2.6.2 Subtools Chiller are included in the offer Yes/No 2.2.6.3 Subtools Ozonizer are included in the offer Yes/No 2.2.6.4 Subtools Purifier are included in the offer Yes/No 2.2.12.2 Interface devices Touchscreen preferred Yes/No 3.1.3 Process Overview Chamber B: BKM for thermal ALD of ZrN, HfN or other nitrides inclusive suggestions for precursors Yes/No 4.1 Source inspection please offer a source inspection if available Yes/No 4.2.4 Installation Optional process gases for chamber A NH3 4.2.6 Installation Optional process gases for chamber B O3,O2, H2O, NF3 5.1.2 Requirement items that are to be offered Set of consumables (lamps, valves, etc., chamber kits) Yes/No 5.1.3 Requirement items that are to be offered Offline Recipe Management System Yes/No 5.1.4 Requirement items that are to be offered Please offer different service contracts with different services / scope / conditions. Yes/No 5.1.5 Requirement items that are to be offered Warranty extension for a further year. Yes/No