ALD System (Dielectric) (IPMS-CNT06.1) - PR1017835-2480-P

1 piece ALD System (Dielectric) (IPMS-CNT06.1)

A piece of equipment to deposit metal nitrides and dielectric layers via thermal ALD processing on wafers with a diameter of 300 mm. Details see Technical Tender Specification.

optional service items: 2.2.1.1.8 Basic configuration one Swap-Kit for metalnitrid chamber included Yes/no 2.2.1.1.10 Basic configuration Waferrotation in process chamber for better uniformity values available Yes/No 2.2.1.1.11 Basic configuration internal storage of Dummywafers/Testwafers "yes/no (if it is part of the offer, then the minimum requirement parameter is: min. 25 wafers, but a higher number of wafer is desired)" 2.2.1.1.12 Basic configuration If no storage available please guarantee that different wafertypes (Dummy, Test, Product) can be processed in one run from different FOUPs/Loadports (parallel mode) Yes/No 2.2.1.1.13 Basic configuration The system is equipped with a notch aligner. This has a programmable notch angle with an accuracy of ≤0.5º for the notch and ≤0.1mm for the centering Yes/No 2.2.1.1.14 Basic configuration Cooling Station or comparable option for wafercooling (e.g. in Loadlock) , that the FOUP sees no heated wafer Yes/No 2.2.1.1.16 Basic configuration Pre-Heat Station/ Pre-Heat-Chamber available Yes/No 2.2.1.1.20 Basic configuration one additional Connection/Window in chamber for insitu metrology (f.e. mass sepctroscopy), further details can be clarified during negotiation Yes/No 2.2.1.1.21 Basic configuration two additional installation ports in chamber for the possibility to do insitu ellipsometry, further details can be clarified during negotiation Yes/No 2.2.1.1.22 Basic configuration Possibility that the wafer backside including bevel is not coated during processing Yes/No 2.2.1.2.5 Cassette and wafer specification -wafer material Handling of Quartz wafers Yes/No 2.2.2.6 Chamber A (Oxide chamber) BKM necessary for Thermal ALD of SiO2 and Ta2O5 with metalorganic precursors inclusive suggestions for precursors are included in the scope of delivery Yes/No 2.2.2.13 Chamber A (Oxide chamber) Oxidizers for ALD with one additional gasline for H2O; yes/no 2.2.2.14 Chamber A (Oxide chamber) Possibility to combine/use processes with O2 and O3 in one process (e.g. doped HfO2--> dopant material runs with O2, HfO2 runs with O3) Yes/no 2.2.2.17 Chamber A (Oxide chamber) Parallel processing option for wafers "yes/no (if available please specify; if part of the offer, then minimum requirement parameter: min. 2 wafer)" 2.2.3.7 Chamber B (Metalnitrid chamber) BKM for Thermal ALD of ZrN and WN with metalorganic or halogen precursors inclusive suggestions for precursors are included in the scope of delivery yes/no; (if it is part of the offer: a higher number of processes are desired) 2.2.3.14 Chamber B (Metalnitrid chamber) Option for further process gases (e.g. H2, SiH4) "yes/no (if it is part of the offer: more gas connections are desired)" 2.2.3.15 Chamber B (Metalnitrid chamber) Option for additional nitridizer gases (Tertbutylhydrazin) "yes/no (if it is part of the offer: more gas connections are desired)" 2.2.3.18 Chamber B (Metalnitrid chamber) Insitu clean option "if available, please specify; yes/no" 2.2.3.19 Chamber B (Metalnitrid chamber) Parallel processing option for wafers "if available please specify, min. 2 wafers; yes/no" 2.2.5.1 Subtools Pumps are included in the offer Yes/No, Edwards-Type 2.2.5.2 Subtools Chiller are included in the offer Yes/No 2.2.5.3 Subtools Ozonizer are included in the offer Yes/No 2.2.5.4 Subtools Purifier are included in the offer Yes/No 2.2.12.2 Interface devices Touchscreen preferred Yes/No 3.1.3 Process Overview Chamber B: BKM for thermal ALD of ZrN, HfN or other nitrides inclusive suggestions for precursors Yes/No 4.1 Source inspection please offer a source inspection if available Yes/No 4.2.5 Installation Optional process gases incl. gaslines for chamber B "H2, H2O, NF3; yes/no" 4.6.10 Process Acceptance-Tests Process test: Chamber B - 10nm MoN "yes / no; (If it is part of the offer, then the minimum requirement is: The system must meet the requirements of the process specifications and process stability for minimum 25x300mm planar bareSi Wafers --> Particle, Thickness-Uniformity,Bow measurement, Sheet resistance 3x200mm bare Si-Wafers in Pocketwafers -->Thickness-Uniformity, Sheet resistance One full chamber load of structured 3D Wafer (see chapter 3.3 )--> Analysis of thickness conformality)" 4.12.1 Extended Warranty The offer includes an extended warranty of further 12 months. Yes/No 5.1.2 Requirement items that shall be offered Set of consumables (lamps, valves, etc., chamber kits) Yes/No 5.1.3 Requirement items that shall be offered Offline Recipe Management System Yes/No